# sio2 hcl

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I have the following equation, based on the reaction of \$\ce{SiO2}\$ with \$\ce{HF}:\$

\$\$\ce{SiO2 + HCl -> SiCl4 + 2 H2O}\$\$

I want to lớn know if this reaction is indeed feasible, what conditions may be needed to lớn induce it, or if it isn't possible why that's the case.

andselisk

asked Jun 26, 2019 at 18:35

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• 2

\$\begingroup\$ No, HCl does not etch SiO2 appreciably. \$\endgroup\$

Jun 26, 2019 at 18:39

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\$\begingroup\$ You can store HCl in a glass bottle. Please don't vì thế that with HF. \$\endgroup\$

Jun 26, 2019 at 18:43

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\$\begingroup\$ Well, Cl is very much not lượt thích F. For this reason, the reaction is totally impossible. Or rather, it will go quite readily, only backwards. \$\endgroup\$

Jun 26, 2019 at 18:53

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\$\begingroup\$ @faissaloo - in grad school somebody really messed up a hood by being lazy and pouring HF waste into the (glass) waste bottle sitting there (for aluminum etchant). What a mess to lớn clean up! \$\endgroup\$

Jun 26, 2019 at 19:03

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\$\begingroup\$ The reaction works with a high efficiency in the opposite sense : \$\ce{SiCl_4}\$ reacts quite easily with the slightest amount of water to lớn produce huge fumes of silica + HCl. This reaction has been used in war times for hiding tanks advancing in the direction of the enemy. \$\endgroup\$

Apr 9, 2020 at 17:02

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According to lớn the paper by Chung and Sturm [1], \$\ce{HCl}\$ will vì thế a very small amount of etching at high enough temperatures (525 °C will give you about 1 nm/min), but the presence of hydrogen limits the reaction because the formation of \$\ce{HCl}\$ is preferred to lớn the formation of \$\ce{SiCl4}.\$

### References

1. Chung, K. H.; Sturm, J. C. Chlorine Etching for In-Situ Low-Temperature Silicon Surface Cleaning for Epitaxy Applications. In ECS Transactions; ECS: Chicago, Illinois, 2007; Vol. 6, pp 401–407. DOI: 10.1149/1.2727426.

andselisk

answered Apr 9, 2020 at 14:24

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